发明名称 RELIABILITY EVALUATION ELEMENT FOR THIN FILM WIRING AND RELIABILITY EVALUATION OF THIN FILM WIRING
摘要 PURPOSE:To provide a very compact apparatus as an entire system, by providing a thin film wiring under test, which is formed on a semiconductor substrate, and providing a constant current source circuit, which is formed on said semiconductor substrate and supplies a constant current to said thin film wiring under test. CONSTITUTION:The initial resistance value of a thin film wiring under test 1 is measured through four electrode terminals 2-5 by using a four-terminal measuring method. After the initial measurement, an evaluation element is placed in a constant temperature oven. A voltage is applied across a voltage applying electrode terminal 7 and a grounding-point electrode terminal 8 from a constant voltage cource, which is provided outside the constant temperature oven. A constant current of, e.g., 3 MA/cm<2>, is made to flow through the thin film wiring under test 1, and the temperature in the constant temperature oven is kept at, e.g., constant temperature of 200 deg.C. After the specified period, the temperature of the evaluation element is recovered to room temperature, and the voltage applied on the evaluation element is turned OFF. The resistance value of the thin film wiring under test 1 is measured by using said four-terminal measuring method. The result is compared with the initial measured resistance value. The reliability of the thin film wiring under test is evaluated based on the difference. Thus the entire system can be made compact.
申请公布号 JPS63156331(A) 申请公布日期 1988.06.29
申请号 JP19860304354 申请日期 1986.12.19
申请人 MATSUSHITA ELECTRONICS CORP 发明人 TATSUMA KENICHIRO
分类号 H01L21/66;G01R31/30 主分类号 H01L21/66
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