| 摘要 |
PURPOSE:To make it possible to secure a current injection characteristic, which is obtained by a heterojunction with a recombination current being decreased, when the heterojunction is formed with two kinds of semiconductor layers having different forbidden band widths, by forming a P-N junction plane at a position, which is separated from the heterojunction plane by a distance within the diffusing length of carriers. CONSTITUTION:An n-type epitaxial layer 2 is formed on a p-type Si substrate 1. Then an SiO2 film 3 is formed, and thereafter an opening part 4 is provided. Boron is diffused and a boron diffused layer 5 is formed. Then As ions are implanted very shallowly (within the diffusing length of carriers) in the base diffused region 5 through the opening part 4, and an n-type region 6 is formed. Then an n-type GaAs layer 7 is formed on the n-type region 6 through the opening part 4. Thus a P-N junction is formed at a part, which is shifted from a heterojunction, where interface levels are many. Therefore the recombination of electric charge, which is injected over the P-N junction through the interface levels is reduced. Under this state, the effect obtained by the 1 heterojunction can be maintained.
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