METHOD FOR GROWING ZINC SELENIDE SINGLE CRYSTAL FILM

摘要

PURPOSE:To improve the electrical, optical, and crystallographic characteristics, by growing ZnSe on a GaAs substrate at a specified temp. to moderate the lattice irregularity, and then further low temp. growing the crystal thereon. CONSTITUTION:ZnSe is grown on GaAs at 320-550 deg.C by an organometallic vapor growth method to obtain a first layer. An org. Zn compd. and the hydride of Se or an org. Se compd. are used in the organometallic vapor growth method. A second layer is further grown at the low temps. of 230-270 deg.C.