| 摘要 |
PURPOSE:To form a substrate for MMIC with good productivity by a method wherein the main surface of the first semiconductor and the first main surface of the second semiconductor are ground to be pasted together under a high vacuum and at a high temperature, then the second main surface of the second semiconductor is ground to obtain a prescribed thickness for forming an integrated circuit. CONSTITUTION:An N-type low resistance silicon single crystal semiconductor substrate 101 is about 350mum thick and has a mirror surface 102 having high flatness. A GaAs semi-insulating single crystal semiconductor substrate 103 is about 200mum thick and has simillarly a mirror surface 104 having high flatness. The mirror surfaces 102 and 104 having high flatness closely adhere with each other under a high vacuum and at a high temperature. Then, the GaAs semi-insulating single crystal semiconductor substrate is ground in the manner to be 100mum thick so as to expose a GaAs single crystal surface 105. Thereby, a high performance microwave element or a transistor can be built-in.
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