| 摘要 |
PURPOSE:To prevent occurrence of damage, by using both a bias ECR depositing device, which can enhance ion density, and an ordinary plasma depositing device or an ECR plasma depositing device, and making the flattening time as short as possible. CONSTITUTION:A first deposited film of a silicon oxide film or a silicon nitride film is deposited to about the same thickness as that of a first Al wiring 2 by a plasma depositing device or an ECR plasma depositing device. The first deposited film is etched in a mixed liquid of fluoric acid and ammonium fluoride. A slit 15 is formed at the side surface part of a step. Then the slit is made to be the thickness of a flat part by using a bias ECR depositing device, and the slit is filled with a second deposited film 16. A third deposited film 17 as an interlayer insulating film is deposited by the plasma depositing device or the ECR plasma depositing device. The flattening time can be made very short using the high energy ions in this way. Therefore, damages to a semiconductor element can be reduced.
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