| 摘要 |
PURPOSE:To prevent wire breaking of, by providing an interlayer insulating film having the width and the length corresponding to an upper wiring layer between a lower wiring layer and the upper wiring layer, and surrounding the upper wiring layer and the interlayer insulating film with another interlayer insulating film. CONSTITUTION:A lower Al wiring layer 2 is provided on an insulating film 1 comprising PSG and the like. A hillock preventing insulating film 3 comprising PSG and the like is provided, and an interlayer insulating film 4 comprising PSG and the like is further provided on the upper surface of the film 3 by plasma CVD method and the like. With an upper Al wiring layer 5 as a mask, the insulating films 3 and 4 undergo anisotropic etching. Thus a hillock-preventing insulating film 3a and an interlayer insulating film 4a having the width and the length corresponding to the upper Al wiring layer 5 are formed on the surface of the lower Al wiring layer 2 in this sequence. Then an interlayer insulating film 7 comprising PSG and the like is provided on the surfaces of the lower Al wiring layer 2 and the upper Al wiring layer 5. Since the interlayer insulating film beneath the upper wiring layer 5 is cut with the insulating films 4a and 7 in this way, the amount of stress applied to other places due to the expansion and contraction of the insulating film 4a is smaller, and stress applied to the upper wiring layer 5 becomes smaller.
|
