| 摘要 |
PURPOSE:To provide an MOCVD apparatus which can produce highly safe products at low cost, by adapting the apparatus such that an arsine gas before its reaction is heated preliminarily at a temperature lower than a temperature at which crystals are caused to grow, and supplied directly to a reaction tube through a supply line independent from those for other raw gases. CONSTITUTION:An organic metal 2 such as diethyl zinc or trimethyl gallium carried by hydrogen gas serving as a carrier 1 is supplied into a reaction tube 4. Arsine gas which has been heated to about 200-400 deg.C by a preliminary heating furnace 9 is supplied into the reaction tube 4 through a supply line independent from that for the organic metal 2. In the reaction tube evacuated by a rotary pump 6, crystals of a predetermined material are grown. Since the supply line for the arsine gas 3 is independent from those for the other raw material gases, no reaction is caused among the raw gases within the arsine gas supply line when it is provided with the preliminary heating furnace 9 and, therefore, production of dust due to the reaction of raw material gases can be prevented.
|
