| 摘要 |
PURPOSE:To obtain the title device for epitaxy capable of minimizing the pressure fluctuation in a pressure cell for discharging a gaseous reactant, by stepwise lowering the pressure of a source gas (gaseous reactant) from a gas source, and then supplying the gas to the pressure cell. CONSTITUTION:The gaseous reactant (e.g., triethylgallium) is supplied 12 to the pressure cell 13 from a gas cylinder 11. The pressure of the gaseous reactant held at a pressure P0 in the cylinder 11 is controlled by a pressure leak valve 13 to a pressure P1 close to the final pressure Pf and then stepwise lowered by fast opening and closing valves 15-18 (P1 P1 P2 P3 P4 Pf), and the gaseous reactant held at the pressure Pf is supplied to the pressure cell 13. The pressures are monitored by pressure sensors between the respective valves 15-18 to stepwise control the pressures with use of the valves 15-18. The valves 15-18 are opened and closed at high speed in accordance with the detected pressures, and the pressures between the respective valves 15-18 are controlled to specified values. As a result, the epitaxy necessitating a strict control such as a ultra lattice can be carried out, since the source gas is kept at a constant pressure.
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