| 摘要 |
PURPOSE:To prevent warping of a semiconductor layer due to stress and to obtain a semiconductor device characterized by easy handling and assembling, by selectively forming insulating layers and semiconductor layers on the first main surface of a semiconductor substrate. CONSTITUTION:GaAs layers 3a and 3b are formed on an Si substrate 1 in regions which are divided by an insulating layer 2. Therefore, the maximum stress yielded in each region is limited with the size of the region. The stress is less than the maximum stress when a GaAs layer is formed on the entire surface of the Si substrate 1. The warping of the entire optical generator element becomes the sum of warpings of the regions. The warping is less then the warping when the GaAs layer is formed on the entire surface of the Si substrate 1. Since a P-type electrode 7 is formed on the insulating layer 2, the forming region of the GaAs layers is reduced, and the reduction of the light receiving area can be controlled to the minimum degree. |
