| 摘要 |
The present invention provides a highly thermal conductive, electrical insulating ceramic body having at least 90% of theoretical density and comprising 20 to 40% by weight of silicon carbide, the balance being substantially aluminum nitride, the silicon carbide containing not more than 0.1 by weight of sum total of boron, aluminum and nitrogen and not more than 0.2% by weight of sum total of iron, titanium, vanadium, chromium and nickel, and the aluminum nitride containing not more than 1% by weight of oxygen and not more than 0.5% by weight of sum total of silicon, iron and magnesium, the sintered body having a thermal conductivity at 20 DEG C. of at least 250 W/m. DEG K, an electrical resistivity at 20 DEG C. of at least 1010 OMEGA . cm, a dielectric strength at 20 DEG C. of at least 20 kV/cm, a dielectric constant at 1 MHz of not more than 10, a bending strength at 20 DEG C. of at least 400 MPa and a fracture toughness at 20 DEG C. of at least 5MN/m3/2. The present sintered body can be used as a substrate for a semi-conductor device, and a semi-conductor device using the present sintered body has good heat radiation. The present sintered body can be used as a substrate for a semi-conductor device, and a semi-conductor device using the present sintered body has a good heat radiation characteristic. |
