| 摘要 |
PURPOSE:To suppress a leakage current and improve a resolution by a method wherein an a-Si film is removed by etching except the region under a transparent electrode to suppress electrical continuity provided by the a-Si films among respective picture elements. CONSTITUTION:An a-Si film 3 is removed by etching except the region under a transparent electrode 2 which is to be an upper electrode. Therefore, in the case of a lower electrode common type, the a-Si films 3 exist under the upper individual electrodes 2... only and the a-Si films 3 do not exist between the respective individual electrodes 2.... In this case of upper electrode common type, because the transparent electrode 2 is used in common, the a-Si film 3 under the electrode 2 is not divided for the respective picture elements. However, as the a-Si films which provide electrical continuity do not exist between the terminals 5... of respective individual electrodes 1... so that a leakage current can be suppressed and the terminal width D can be widened as shown by chain lines and a pattern cut can be eliminated and, moreover, a sufficient current capacity can be obtained. |
