| 摘要 |
PURPOSE:To realize the high integration by a method wherein a Schottky barrier diode (SBD) is constructed by using poly-Si and a guard ring for the SBD and a resistor are composed of the poly-Si. CONSTITUTION:An SiO2 film 12 is formed on the surface of an Si substrate 11 whose surface is an n-type epitaxial layer; a window 16 is opened at the film 12. Then, poly-Si is grown on the whole surface by a CVD method; a poly-Si film 13 is formed after patterning. Then, a resist material 17 is coated and patterned; after ions of B have been implanted into a region where a guard ring for the film 13 and a resistor are to be formed, the assembly is heat-treated. In succession, after an SiO2 film 14 has been grown and the upper part of a window 16 has been opened, an Al wiring part 15 is formed. By this method, because one part of the poly-Si film constituting a Schottky barrier diode functions both as the guard ring and as the resistor, it is possible to realize the high integration. |
