| 摘要 |
PURPOSE:To reduce a residual stress and to reduce the corrosion and the braking of a wiring part for a semiconductor device by a method wherein a surface- protective film for the semiconductor substrate is constructed by a multilayer structure composed of an LCVD-SiN film and a PCVD-SiN film. CONSTITUTION:A surface-protective film for a semiconductor device is constructed by a multilayer structure composed of a silicon nitride film (LCVD-SiN film) 25 formed by a laser CVD (chemical vapor deposition) method and a silicon nitride film (PCVD-SiN film) 19 formed by a plasma CVD method. when this surface-protective film is to be formed, the protective film for the semiconductor is formed in such a way that the LCVD-SiN film is formed at a temperature where a tensile stress of the LCVD-SiN film 25 becomes a desired tensile stress and that a compressive stress of the PCVD-SiN film 19 is offset by the tensile stress of the LCVD-SiN film 25.
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