| 摘要 |
PURPOSE:To form a groove having a narrow opening width by forming a rectangular groove in a semiconductor substrate, and epitaxially growing silicon in the groove and on the whole substrate. CONSTITUTION:An oxide film 2 is formed on a silicon substrate 1, the film 2 is covered with a photoresist 3, and the photoresist 3 and the film 2 above a trench forming section in the substrate are sequentially patterned. Then, with the photoresist 3 as a mask the exposed substrate 1 is removed by etching substantially perpendicularly, thereby forming a trench 4 of approx. 3mum wide and 4mum deep. Then, silicon is formed by epitaxial growth approx. 1mum thick to form a silicon epitaxial layer 5. Then, both the width W and the height H of the layer 5 formed in a trench become approx. 1mum. Accordingly, a small trench formed later in the trench has a size of 1mum wide and 4mum thick. Then, a semiconductor device is formed by a known method.
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