| 摘要 |
PURPOSE:To improve noise characteristics and high-frequency characteristics, by sticking an organic film and an inorganic film on a first semiconductor layer and using a resist film as a mask so as to etch the inorganic film and the organic film and using the organic film as a mask so as to etch the first semiconductor layer and thereafter isotropically etching the organic film and removing the inorganic film and next forming a metallic electrode by a lift off method. CONSTITUTION:An n-type GaAs electrode contact layer 12 and an organic film 13 are on a main operation part 11, and an alteration layer 14 is formed on the surface, and next an inorganic film 15 and an electron-beam positive type resist 16 are stuck thereon. Successively, the intermediate-layered inorganic film 15 and the lower-layered organic film 13 are etched. Next, the organic film 13 is used as a mask so as to etch the n-type GaAs layer 12, and O2 plasma is used to etch the lowerlayered organic film 13, and then the intermediate inorganic film 15 is removed, and a gate electrode metal 16 is evaporated, and a lift-off method is used to manufacture a field effect transistor with a T-shaped gate electrode.
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