| 摘要 |
PURPOSE:To enhance the resistance of an InP layer with good reproducibility by simultaneously doping manganese of relatively deep acceptor level and titanium of deep doner unit. CONSTITUTION:An In material and an InP material in which the remaining carrier concentration of the InP epitaxial layer of undoped state becomes 1X10<15>cm<-3> are prepared. Mn is added to these materials to prepare InP solution having, for example, a ratio of In:InP:Mn=1g:21.0 mg:3X10<-3>mug. An epitaxial layer is grown from the Mn-containing InP solution to obtain a p-type InP layer. Ti is further added to the M-added InP material and the InP material to prepare an InP solution having, for example, a ratio of In:InP:Mn:Ti=1g:21.0 mg:3X10<-3>mum:2mg. When it is formed by epitaxial growth from the Mn- and Ti-containing InP solution, a high resistance InP layer is obtained.
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