| 摘要 |
PURPOSE:To improve the surge absorbing capacity without increasing parasitic capacitance by forming two electrodes at both sides of a linear diffusion region of a protective diode. CONSTITUTION:The first N-type diffusion region 3 is formed at a compound semiconductor substrate 2. Being convoluted after crossing the center of the region 3, the second P<+> type diffusion region 4 is formed so that it is shallower and more concentrated than the region 3. And the first electrode 5 is formed by performing ohmic contact at both sides of the region 4 on the region 3. In such a case, both two electrodes 5 are connected to a source. The second electrodes 6 are formed by performing ohmic contact at both sides of the region 4. A protective diode 1 is formed by the electrodes 5 and 6. This configuration allows the surge absorbing capacity to be improved by twice without increasing an area of the region 4 where parasitic capacitance is generated.
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