| 摘要 |
PURPOSE:To obtain high sensitivity particularly to a color B, by disposing a second conductivity type semiconductor region, wherein patterns are formed of stock parts and parts branching out the stock parts, on the upper layer part of a first conductivity type semiconductor substrate. CONSTITUTION:An n-type region in a photodiode 2 is formed in a so-called comb shape. The region in a photodiode 3 is extended zigzag. The n-type region in a photodiode 4 is formed in a deformed comb shape. It can be considered that this n-type region is composed of a stock part disposed horizontally on its lower part, a branch part shaped in a reverse L, and a rectilinear branch part, or that it is composed of a stock part shaped in a reverse T and rectilinear branch parts. Boundary lines between P types and n types in the photodiodes 2 to 4 are formed longer than the boundary line in the photodiode 1. A curved line 6 equivalent to an exponential function represents intensity of incident light in the semiconductor, and length of an arrow 7 signifies intensity of the incident light to the corresponding depth of the semiconductor.
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