| 摘要 |
PURPOSE:To reduce a stress due to a passivation film added to a wiring electrode by forming the uppermost layer of a multilayer interconnection layer, then removing an exposed interlayer insulating film with the interconnection layer as a mask and then forming the passivation film on the whole surface. CONSTITUTION:A multilayer interconnection structure having 3 aluminum wiring layers 2, 4, 6 is obtained on an Si substrate 1. Two interlayer insulating layers 3, 5 are made of CVD SiO2 layers or PSG layers, and the third insulating layer 7 of an overpassivation layer is composed of a plasma SiNx layer. Then, the whole surface is etched by RIE with CHF3/O2 gas to remove by etching all the passivation films. As a result that the passivation films are removed with the aluminum wiring electrode as a mask, the passivation films remain only under the electrode and on the side. An overpassivation film 8, such as plasma SiNx film, etc., is eventually formed on the whole surface, the film 8 on the pad electrode is removed, and a window is then opened.
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