| 摘要 |
PURPOSE:To prevent resist layers from being mixed with each other and to realize the coating process of multilayers by a method wherein, after the surface of a first resist layer has been processed by a plasma, a regenerated layer is composed of a fluorocarbon material. CONSTITUTION:A first resist layer 12 is coated on a semiconductor substrate 11. After this assembly has been pre-backed at about 90 deg.C, it is illuminated by a plasma 13 in a gaseous atmosphere of CF4, CHF3 or the like, and a regenerated layer 14 is formed on the surface of the first resist layer 12. PMMA suitable for a minute pattern process is applied as a second resist layer 15 so as to form a two-layer resist structure. An opening is made at the second resist layer 15 by an ordinary alignment method so as to make a resist hole 16; the first resist layer 12 is developed by using an AZ developing solution. By this method, a two-layer resist pattern is completed. As a result, it is possible to prevent resist the layers from being mixed with each other and to realize the coating process of multilayers.
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