| 摘要 |
PURPOSE:To reduce a dimension and to decrease an on-resistance, by forming a part of a source region upwardly on a surface of a substrate. CONSTITUTION:A gate oxidizing film 7 is formed in a recessed shape on a substrate, and a base region 3 is formed and thereafter undoped polycrystal silicon is piled all over the surface in order to form a gate electrode 6 and an external source region 8. Then, after the surface is flattened, it is irradiated with phosphorus ion beams 12. Phosphorus in polycrystal silicon is diffused into the base region, and next a source region 4 is formed, and thereafter phosphorus glass 10 is piled all over the surface. After heat treatment is performed for this substrate, etching is performed for formation of a base drawing region 5. Then, with the region 5 used as a mask, boron ion beams are radiated. Successively, the surface of the region 5 and the side of the region 8 are cleaned by a dry etching method, and next aluminium is stuck thereon so as to form a source drawing electrode 9. |
