Semiconductor laser device with a V-channel and a mesa

摘要

A semiconductor laser device comprises an active layer, a current blocking striped-channel formed below the active layer in such a manner that light in the active layer for laser oscillation is absorbed by both shoulders of the striped channel, this results in an index-guided optical waveguide being formed within the active layer. Mesa channels are formed outside of the optical waveguide in a manner to cut off. The active layer, the distance between the mesa-channels is greater than the distance between the shoulders of said striped channel.