发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To prevent the substrate bias from being fluctuated by the effect of other signals or from being attenuated by the resistance of inner wiring layer for preventing any erroneous operations of device from occurring, by a method wherein a substrate bias power supply line is provided near the peripheral part of a substrate bias generating circuit. CONSTITUTION:A substrate bias supply line 3 is provided near the peripheral part of a substrate bias generating circuit 2 to prevent the substrate bias from being fluctuated by the effect of signals from other signal line group or from being attenuated by the resistance of inner wiring layer 5. Besides, the substrate can be stably fed with the substrate bias to prevent any erroneous operations of device from occurring. Furthermore, a high concentration P<++>layer 9 is provided in a P<+>well 8 positioned on the surface of P type substrate 7 while the layer 9 is in ohmic contact with the substrate bias power supply line 3 to reduce the contact resistance. Thus, the supply feeding space can be expanded by increasing the junction space of P type substrate 7 and the P<+>well 8 to stably feed the substrate with substrate bias subject to less fluctuation.
申请公布号 JPS63153852(A) 申请公布日期 1988.06.27
申请号 JP19860301963 申请日期 1986.12.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAZAKI HIROYUKI;KUMANOTANI MASAKI;IKEDA ISATO;TSUKAMOTO KAZUHIRO;HIDAKA HIDETO;KONISHI YASUHIRO;DOSAKA KATSUMI;MIYATAKE HIDEJI;SHIMODA MASAKI
分类号 G11C11/401;G11C11/407;H01L21/822;H01L27/02;H01L27/04;H01L27/10 主分类号 G11C11/401
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