| 摘要 |
<p>PURPOSE:To reduce write time by turning on all transistors (TRs) provided to each bit line through the control of each signal line so as to attain simultaneous write to plural memory cells connected to one word line. CONSTITUTION:All transistors (TRs) QX0, QX1,... are turned on by controlling a signal line X of an EPROM and a prescribed voltage is applied, e.g., to a word line W0. Thus, simultaneous write is applied to plural memory cells Q00, Q01,... connected to the word line W0. In this case, since the load of the TRs QX0, QX1,... are each of memory cells Q00, Q01,... a power voltage with less voltage drop is applied to all bit lines B0, B1,... to attain stable write.</p> |
