| 摘要 |
PURPOSE:To make the title device process a differential negative resistance characteristic, which is large in the maximum current density and either of the maximum and minimum current density ratios, by a method wherein the device is provided with a quantum well which is formed on a substrate and has a well layer pinched by barrier layers to be selected from each specified mixed crystal. CONSTITUTION:The title device is provided with a quantum well which is formed on an InP substrate (for example, a semi-insulative InP substrate 1) and has InGaAs well layer (for example, an I-type In0.53Ga0.47As well layer 4) pinched by barrier layers (for example, I-type Al0.48In0.52As barrier layers 3 and 5) selected from each mixed crystal of AlxGayIn1-x-yAs (0<x<=0.48, 0<=y<0.47) or AlxIn1-xAs (0.48<x<=1). As the effective mass of carriers is smaller compared with that in the conventional AlGaAs/GaAs/AlGaAs quantum well, a tunneling probability is augmented, and at the same time, the scattering probability in the barrier layers is decreased.
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