| 摘要 |
PURPOSE:To prevent a stripe, defined dependent on a Zn-or Si-diffused region, from becoming wider as it grows deeper by a method wherein Zn or Si is introduced from one direction into an active layer, built of a multiple quantum well (MQW) consisting of a GaAs film and an AlGaAs film, and into two clad layers sandwiching the active layer, to selectively disordering the active layer. CONSTITUTION:On an n<+>-type GaAs substrate 1, an n-type AlGaAs clad layer 2, an MQW active layer 3 built of a GaAs film and an AlGaAs film, a p-type AlGaAs clad layer 4, and a p<+>-type GaAs electrode contact layer 5, are grown. It is so arranged in an Si-diffused region 9 that a value (x) in the clad layers 2 and 4 may be gradually higher toward the active layer 3. An SiO2 film 8 is removed, an Si film 7 is removed, mesa-etching is done for the electrode contact layer 5, and then a part of the Si-diffused region 9 is removed. After the removal of a photoresist film and others, an SiO2 film 10 is subjected to patterning for the formation of a stripe-geometry window positioned to face the electrode contact layer 5. An evaporation-formed Au/Zn/Au film is removed in a patterning process after which a stripe-geometry portion is retained. |
