| 摘要 |
PURPOSE:To suppress thin film deposition reaction in a substrate supporting part in chemical vapor growth and to permit formation of thin film having high reliability by maintaining the temp. in the substrate supporting part at the temp. lower than the temp. in the inside wall part of the reaction furnace. CONSTITUTION:A door 6 of the reaction furnace 1 is opened and a supporting bar 4 installed with a substrate 14 supporting means 5 loaded vertically with many sheets of the substrates 14 in one row by supporting the substrates into grooves is transferred into the furnace 1. After the door 6 and a supporting plate 8 of the bar 4 are brought into tight contact with each other, the inside of the phones 1 is evacuated and heated by 3-zone heaters 2, 3. The bar 4 has a cavity internally to allow circulation of a coolant, by which the temp. of the bar 4 is maintained always lower than the temp. in the furnace 1. The thin films of W, etc., are successively deposited on the substrates 14 when gaseous WF6, H2, etc., are controlled and passed from a gas chamber 17 to the furnace inside, but the thin films are not deposited on the bar 4 as the temp. thereof is sufficiently low. Since there is no consumption of the gaseous WF6, etc. by the bar 4, the gases can be supplied at a uniform density onto the substrates 14 and the thin films having high reliability are formed.
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