| 摘要 |
<p>PURPOSE:To improve the precision of contact hole by a method wherein a precise opening is made using a thin insulating film on a substrate as a wall; a thick insulating film is formed; and a contact hole including said opening is made in the thick insulating film. CONSTITUTION:A thin Si oxide insulating film 5 is formed on a GaAs wafer 1 to make a precise opening 6. Next, another opening 7 connecting to the opening 6 is made using a thick polyimide film 2 formed on the film 5 as a wall. At this time, the diameter of exposed surface of a wafer 1 at the part to be a Schottky junction can be controlled according to the processing precision of film 5 to improve the precision markedly. Furthermore, a metallic thin film 4 is formed on the processed wafer 1 to form a Schottky metal.</p> |
