| 摘要 |
PURPOSE:To increase the number of channels per unit area, by constituting a power MOSFET of many wells in which a source, a drain, a channel, a gate electrode, etc., are formed, but a contact is not formed, and mutually connecting these with a basic cell. CONSTITUTION:On the surface layer part of an N<-> type Si substrate 2 serving as a drain formed is a well region 24 where the central part is a P<+> type and the peripheral part is a P<-> type, and an N<+> type source region 26 is formed on the surface layer by diffusion. A gate insulating film 8 is formed from the periphery of the region 26 to the surface of the surface 2, and a gate electrode 10 is arranged thereon. These are covered with an insulating film 12, and a metal wiring 16 is stuck on the whole surface while filling a contact hole 14 formed on the region 26. Thus individual cells are constituted. These basic cells 20a-20d arranged in the form of a quadrangle having a space; in the middle part of it, a basic cell 20e having a P<+> type region, an N<+> type region, a window 24a, and a contact hole 14a is arranged, where the respective wirings 16 of the respective cells 20a-20d are gathered. Thereby, both channel resistance and ON resistance can be decreased. |
