| 摘要 |
PURPOSE:To form a high resistance part with dimensional accuracy without possibility of impurity diffusion, by stacking a low resistance layer of metal or metal compound so as to neighbor with a poly silicon high resistance layer. CONSTITUTION:A poly silicon 2 is deposited on an Si substrate 1, and impurity ions are implanted. A metal, such as Cu, Ni or W whose melting point is higher than or equal to 900 deg.C, or a metal compound 6 of low resistivity is stacked. A resist mask 3 is formed, and the layers 6 and 2 are subjected to etching. Then the low resistance layer 6 on a high resistance layer is annealed, and the precision of a high resistance part 21 is increased. The high resistance part can be precise formed without impurity diffusion from the low resistance layer 6.
|
