| 摘要 |
PURPOSE:To directly process a compound semiconductor by irradiating a substrate with focussed electron beams in Cl2 atmosphere. CONSTITUTION:Cl2 is contained in a reactive gas material container 101 while a GaAs substrate 105 is arranged on a specimen base 104. First, an electron beam irradiating system 110 and a specimen chamber 108 are vacuumized up to a high degree of vacuum and then the inside of a subspecimen chamber 106 and the container 101 are also vacuumized through a pinhole 107 by vacuumizing the specimen chamber 108. Second, the inside of chamber 106 is filled with Cl2 as reactive gas through a piping 103. Finally, the substrate 105 is irradiated with electron beams focussed through the pinhole 107 to etch the irradiated part of substrate 105. Through these procedures, III-V compound semiconductor can be directly processed simplifying the processes to be formed into a highly precious pattern.
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