| 摘要 |
PURPOSE:To prevent any edge short-circuit from occurring even if any chip edge corners of metallic fine wires come into contact with one another by a method wherein, within a dicing region adjacent to bonding terminals, impurity partial diffused regions forming a PNP junction are formed. CONSTITUTION:Bonding terminals 12 connected to an element by inner wirings 13 are provided on the peripheral surface of a chip 10 while one ends of Al fine wires are connected to the terminals 12 and the other ends are connected to inner ends of lead terminals of an outer container. The bonding terminals 12 are provided on a field oxide film 4; a dicing region 11 of a part of thin oxide film 5 following the chip edge of film 4 is formed into an N type epitaxial layer 2 formed on a P type substrate 1; and P type partial diffused layers 3 are formed in the layer 2. In such an IC, even if the fine wires 14 connected to the terminals 12 come into contact with a part of substrate slightly exposed from the films 5 in case of cutting chip 10 at the chip edge corners, any edge short-circuit can be prevented from occurring even if terminals come into contact with any chip corners due to the layers 3 existing in the layer 2 as well as the PNP junction laid between the terminal 12. |
