| 摘要 |
PURPOSE:To make excess charge flow into the substrate side to increase the photo sensitivity, and restrain sufficiently the blooming phenomenon, by making the depth of a lower part impurity layer constituting a solid state image sensor shallower at the peripheral part than at the central part. CONSTITUTION:Before a photo diode part 1 and a CCD register part 3 are formed on an N-type Si substrate 12 to constitute a solid state image sensor, firstly a p-type layer 13 is deposited on the substrate 12. The register part 3 is provided with an insulative film 16 for element isolation under which a p-type layer 18 for channel stop is arranged, and an n-type layer 15 which serves as a channel part of the register part 3 is formed so a to neighbor with the film 16. In a diode part 1 formed is an n-type region 11, which is situated on the surface layer part of a layer 13 and stores the electric charge generated by incident light. The depth of the layer 13 under the region 11 is made shallow in the peripheral part of the region 11. An interlayer insulating film 17 containing a selection gate 14 which serves as a transfer electrode is stuck on the whole surface of the register part 3, and thereon a light shielding film 19 of Al is formed so as to face the gate 14, where d and d' show depletion layers. |
