发明名称 METHOD FOR DETECTING GAP OF SEMICONDUCTIVE DEVICE
摘要 PURPOSE:To detect the presence and place of the gap between a molding resin and a lead wire by a method wherein a semiconductive device is immersed in a fluorescent aqueous solution and subsequently drawn up to wash off the solution and the solution remaining in the gap is irradiated with ultraviolet rays to investigate the presence of the generation of fluorescence. CONSTITUTION:A semiconductive device 1 is packed by a molding resin 3 so as to expose a part of the lead wire 2 thereof. This device is immersed in a fluorescent aqueous solution for a predetermined time and subsequently drawn up and a liquid 6 composed only of the solvent remaining after removing a fluorescent indicator from the solution 5 is sprayed to the device 1 in a mist form to wash off the solution adhered to the surface of the device 1. Next, the liquid 6 is sprayed to the exposed part of the lead wire 2 so as to be adhered thereto. Whereupon, in the lead wire 2 having a gap 4 between the molding resin 3 and the lead wire 2, the solution 5 remaining in the gap 4 is mutually diffused along with the liquid 6 to exude in the direction of the lead wire 2. When the lead wire 2 is irradiated with ultraviolet rays 8, green fluorescence 9 is emitted from the solution 5. Therefore, by observing the fluorescence 9, the presence of the gap 4 and the lead wire 2 having said gap 4 can be identified.
申请公布号 JPS63151806(A) 申请公布日期 1988.06.24
申请号 JP19860300354 申请日期 1986.12.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIOKA SUNAO;KOYAMA HIROSHI;MASUKO YOJI
分类号 H01L21/66;G01B11/14;H01L23/00 主分类号 H01L21/66
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