| 摘要 |
PURPOSE:To facilitate the assemblage with no cracks by bonding the magneto- sensitive part side formed on the surface of a semiconductor substrate to a jig and applying lapping or etching to the reverse side, and with this condition, bonding a substrate of a magnetic material to the lapped surface, removing the jig and dividing this into respective elements. CONSTITUTION:Si ions are implanted into a desired region of an semiinsulating GaAs substrate 13, and a heat treatment is applied to make the implanted region into an N-type one, thereby forming a magneto-sensitive part 14 of a hole element. Then the side of, the magnetosensitive part 14 is bonded to a lapping jig 15 and the oppsite side is lapped to form a GaAs substrate 11 having a desired thickness. In this condition, a magnetic substrate 12 such as Ni-Zn ferrite is bonded to the lapped surface using an epoxy resin. After no crack has been made to occur during the process in this way, the jig 15 is removed, an adhesive tape 16 is applied to the substrate 12 side, and the substrates are diced into individual chips. Thereafter, die bonding, wire bonding and resin mold are performed as usual.
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