| 摘要 |
PURPOSE:To obtain a solar cell in which a long wavelength light effectively contributes to power generation, by a method wherein thermal energy of laser light and the like is given to a semiconductor film formed on the far end from a light incidence surface of the solar cell constituted by stacking a plurality of photovoltaic layers, and thereby amorphous films are crystallized. CONSTITUTION:On an insulative substrate 11 like a glass plate, a first electrode 12 of stainless steel and the like is stuck to constitute a substrate 1, and thereon the following are deposited: an N-type a-Si film 20, an intrinsic a-Si film 30, a P-type a-SiC film 40, an N-type a-Si film 51, an intrinsic a-Si film 52, and a P-type a-SiC film 53. These are covered width a transparent electrode 6, and at a specified position thereon, a terminal 7 is formed. Incidence of light 10 is made on the side of the electrode 6. In this constitution, the deposition is once interrupted when the films 20 and 30 are deposited, and the scanning radiation of a laser beam 82 from a laser source 81 is performed from the surface of the layer 30 to the layer 20, via a mirror 83 and a cylindrical lens 84. Thus the layers 30 and 20 only are changed to an intrinsic and an N-type crystallized films 3 and 2, respectively. Thereby a solar cell having large area is obtained at a low cost. |
