| 摘要 |
PURPOSE:To make it possible to inspect the breakdown strength of a gate insulating film due to a dry process by a method wherein a characteristic, inspecting element consisting of a sensor part of a MOS structure and an electrified part to be connected to the gate electrode of the sensor part is formed on an Si substrate. CONSTITUTION:A semiconductor integrated circuit device using a semiconductor substrate 1 is provided with a characteristic inspecting element T. The element T consists of a sensor part S and an electrified part C to be connected to this. The sensor part S is constituted in a MOS structure formed by laminating in order the substrate 1, a gate insulating film 3 and a gate electrode 4A. The sensor part S is formed in the same process as the process for forming an MOSFET in the interior of the semiconductor integrated circuit. The electrifying part C is integrally formed with the electrode 4A. The inspection of the breakdown strength of the film 3, which is performed by the element T, can be known by a method wherein a voltage for inspection is applied to a conductive layer 9 constituting the electrode 4A by a probe and the film 3 is destroyed or not destroyed. In case the part C is electrified due to a dry process, the film 3 is destroyed if the voltage for inspection is applied.
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