| 摘要 |
PURPOSE:To increase the capacity of a photodiode by forming the separating region of at least one pair of photodiodes from other pair of vertical registers of a high concentration impurity in a solid state image sensor in which a signal is read from the photodiode by a second transfer gate, and forming the other separating region of a low concentration impurity. CONSTITUTION:A separating region 8 exists between a photodiode 1-1 and a vertical register 2-1. Here, a high concentration impurity exists in a channel stopper region 3, but the region 8 is formed of a lower concentration impurity than the region 3 over the whole. After charge is stored in the photodiode 1-1, a high voltage VH is applied to a second transfer gate 5 to turn on a signal charge transfer region 7. A first transfer gate 4 becomes an intermediate voltage VM or a low voltage VL at this time. The separating region 8-1 or 8-2 disposed thereunder is, of course, turned off. After the charge of the photodiode is moved from the region 7 to the register 2-1, the voltages VM and VL are alternately repeatedly applied to the gates 4, 5 to transfer the charge to a horizontal register. |
