| 摘要 |
The disclosed memory includes a semiconductor substrate having dopant atoms of a first conducivity type, a plurality of charge storage regions in the substrate, a conductive means over the charge storage regions, dopant atoms of a second conductivity type opposite to the first conductivity type disposed in a subset of the charge storage regions, and a means for selectively applying first and second voltages to the conductive means. With the first voltage applied to the conductive means, the memory operates in a read-only mode where data in the storage regions is fixed and is represented by the presence or absence of the second conductivity type dopant atoms; and with the second voltage applied, the memory operates as a read-write memory where data in the storage regions is variable and is independent of the presence or absence of the second conductivity type dopant atoms. |
