| 摘要 |
PURPOSE:To enhance the luminous efficiency of a semiconductor laser by using a high resistance oxide layer as the buried layer of a buried double hetero junction semiconductor laser to completely confine a current passage in an active layer region so that all currents contributes to laser light radiation. CONSTITUTION:When a positive voltage is applied by an electrode 27 ohmically contacted with a cap layer 25 and a negative voltage is applied by an electrode 28 ohmically contacted with an N-type InP substrate 26 to supply a current, electrons and holes recombine in an active layer 22, and light is radiated. An oxide layer 21 is of a high resistance insulator, and no current flows, but currents supplied externally all concentrate in the layer 22. Thus, a high luminous efficiency can be obtained. Further, since approx. 1.7 of the refractive index of the layer 21 is smaller than approx. 3.2 of the refractive index of the layer 22, the light radiated from the layer 22 is totally reflected on a boundary between the layers 22 and 21, and confined in the active layer. Thus, they can be all produced as effective laser light, thereby improving the luminous efficiency.
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