| 摘要 |
PURPOSE:To form a field effect semiconductor device having electrically normally OFF characteristic by burying a stripe-or mesh-like gate layer having an impurity density higher than a drain layer and a source layer in the same conductivity type as the drain layer in an intermediate layer of conductivity type reverse to the drain layer. CONSTITUTION:A P<+> type ohmic layer 3' interconnected to a P-type intermediate layer 3, a stripe-or mesh-like N<+> type gate layer 4, an N<+> type gate ohmic layer 4' interconnected to the layer 4, an N-type source layer 5, and an N<+> type source ohmic layer 6 are formed. A drain current is stopped to the value of the dielectric breakdown voltage of a PN<-> junction J1 so as not to flow by an NPN<-> structure made of the layers 5, 3 and 2 in the state that a voltage is not applied across the layers 4 and 3. That is, it is a normally OFF. When a reverse bias voltage is applied across the layers 3 and 4, a voltage value for blocking an ID (drain current) gradually drops to obtain an I/V characteristic. Even if the stripe-or mesh-like P<+> gate is buried in the N-type layer in the PNP structure, a normally OFF characteristic can be provided.
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