DYNAMISCHE SPEICHERGRUPPIERUNG MIT WAHLFREIEM ZUGRIFF

摘要

A DRAM memory cell array comprises: bit lines (40) connected to a column decoder (5); word lines (50) connected to a row decoder (6); memory cells (11) for data storage connected between said bit lines (40) and said word lines (50); and sense amplifiers (40) for detection of data stored in said memory cell (11) by selection of an address by said column and row decoders (5, 6). Dummy bit lines (3) are positioned at each end of said memory cell array, the dummy bit lines (3) being free from connections to any of the said sense amplifiers. This arrangement has the advantage not only of prevention of the unbalance in the charging voitage of the bit lines (40) connected to the sense amplifiers (10), but also the prevention of malfunction of memory cells (11) which can be caused by minority carriers generated in the external circuitry. <IMAGE>