发明名称 MAGNETRON SPUTTERING DEVICE
摘要 PURPOSE:To obtain the title device capable of prolonging the service life of a target by relatively rotating a substrate and the target opposed to the substrate to uniformize the erosion of the target face by a sputtered gas ion. CONSTITUTION:The inside of a vacuum vessel 31 evacuated 32 to a specified vacuum is filled with a gas atmosphere of Ar, etc. A carrier 39 for the substrate 38 and a magnet 35 housed directly below the target 34 are subsequently rotated 40 and 37. A specified high voltage 43 is impressed on the target 34 and the carrier 39 through a matching circuit 44, and a shutter 41 is simultaneously opened. The target 34 face is sputtered by the plasma produced by the electric discharge generated at this time, and a thin film is formed on the opposed substrate 38 face at a high film forming rate. The erosion region 51 on the target 34 face cut out and eroded by sputtering moves successively with the rotation of the magnet 35, the region 51 is formed on almost the whole surface of the target 34, and the whole surface is uniformly eroded and consumed. As a result, the service life of the target 34 can be prolonged.
申请公布号 JPS63149375(A) 申请公布日期 1988.06.22
申请号 JP19860296107 申请日期 1986.12.11
申请人 FUJITSU LTD 发明人 WAKAMATSU HIROAKI;MITOBE YOSHIHIRO;KIUCHI KATSUMI
分类号 C23C14/36 主分类号 C23C14/36
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