| 发明名称 |
Bromine and iodine etch process for silicon and silicides. |
| 摘要 |
<p>A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.</p> |
| 申请公布号 |
EP0272143(A2) |
申请公布日期 |
1988.06.22 |
| 申请号 |
EP19870311196 |
申请日期 |
1987.12.18 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WONG, JERRY YUEN KUI;CHANG, MEI;MAYDAN, DAN;WANG, DAVID NIN-KOU;MAK, ALFRED W. S. |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/3213;H01L21/762 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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