| 摘要 |
PURPOSE:To contrive to facilitate the regenerative processing for a second conductive layer and to upgrade the yield of a semiconductor device due to the regeneration by a method wherein a first conductive layer is protected by coating with a coated poly silicon film. CONSTITUTION:The desired P type diffusion region 12 of a source or drain regions, etc., is formed on an N type silicon semiconductor substrate 11 and an insulating layer 13 consisting of a silicon oxide film formed due to a thermal oxidation is provided for coating the surface of the substrate 11. At this insulating layer 13, a contact hole 18 is provided at the part corresponding to the diffusion region 12 and a first conductive layer 14 is adhered on the insulating layer 13 by performing a sputtering of aluminum. Furthermore, a coated poly silicon film 17 is adhered on the first conductive layer 14 by performing a sputtering. After that, the coated poly silicon film 17 and aluminum are successively etched by performing a plasma etching using a photoresist having the desired pattern as the mask and the first conductive layer 14 with the desired pattern is obtained. According to such a structure, even when a malfunction occurs in a second conductive layer 16, the regenerative processing for the second conductive layer 16 can be easily performed, because the first conductive layer 14 has been protected with the coated poly silicon film 17. |
