| 摘要 |
A BaTiO3 ceramic semiconductor is obtained by adding to a basic compsn., mixed by the mol ratio (1:1) with BaCo3 and TiO2 having 98-99% purity, 4 mol% SnO2, 0.02-0.06 mol% Nb2O5, 0.0270.08 mol% Mn (NO3)2, 2.365-3.94 mol% SiO2 and 1-1.5 mol% TiO2. The ceramic semiconductor has specific resistance 70-300Ω.cm, increment ratio of resistance 5X1O5 and withstand voltage 250-300V. This material can be used as a degaussing element esp. a noncontact switch for high voltages.
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