| 摘要 |
PURPOSE:To uniformize the thickness of film by opening a second shutter having a smaller shutdown face than a first shutter between a vaporization source and a material to be vapor-deposited after the spray from the vapor deposition source is stabilized. CONSTITUTION:The second circular shutter 5 for blocking the spray having a smaller shutdown face than the first shutter 4 is set in front of the shutter 4 arranged before the vaporization source 1. The vaporization source 1 is heated, the shutter 4 is opened as shown by the full line, and the vaporized molecules from the vaporization source 1 are allowed to reach the revolving and rotating material 2 to be vapor-deposited. At this time, since the shutter 5 is closed, the spray generated in the vicinity of the center of the vapor stream is deposited on the shutter 5. Since the shutdown face of the shutter 5 is small, the radiation angle of the vapor stream can be sufficiently reserved, hence the vaporized molecules except the spray can be allowed to reach the material 2 to be vapor-deposited. When the spray generation is eliminated, the shutter 5 is opened, and the vapor-deposition rate can be returned to normal. Since the spray can be blocked in this way, a multilayer interference film can be formed in uniform thickness.
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