Annealing method for compound semiconductor substrate

摘要

An annealing method for a GaAs wafer which uses incoherent light, e.g., infrared light generated from tungsten lamp, halogen lamp, etc. and a GaAs guard ring which surrounds the GaAs wafer. The thickness of the guard ring is 1.5 times more than that of the GaAs wafer, the internal diameter of the guard ring is less than diameter of GaAs wafer plus 3 mm and the width of the guard ring is less than 10 mm.