发明名称 ION BEAM IMPLANTING DEVICE
摘要 PURPOSE:To deflect and scan ions and invariably maintain the inclination between ion beams and a sample board constant without increasing the voltage applied to a deflecting electrode by swaying a redeflecting electrode to redeflect the ion beams by the deflection angle synchronously with the deflection waveform using the point where the ion beams are deflected and scanned as an origin. CONSTITUTION:Ion beams 15, 15a, 15b deflected by an X-electrode 13 are fed to a redeflecting X-electrode 17 deflecting ion beams again. The redeflecting X-electrode 17 is swayed by a driver 18b synchronously with the signal of an X-sweep generator 13a centering the fulcrum 19 of an arm 18 fitted to the redeflecting X-electrode 17 so that the locus of the deflected ion beams 15, 15a, 15b invariably passes the center of the mated redeflecting X-electrode. According to this means, the electrode distance of the redeflecting electrode 17 does not require the distance to scan in the X-axis direction of a sample board. Thereby, the inclination between ion beams and the sample board can be invariably maintained constant without increasing the voltage applied to the redeflecting electrode.
申请公布号 JPS63148526(A) 申请公布日期 1988.06.21
申请号 JP19860295341 申请日期 1986.12.10
申请人 NEC CORP 发明人 OZAWA TOSHIHARU
分类号 H01L21/265;H01J37/317 主分类号 H01L21/265
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