发明名称 MULTIPLE WAVE LENGTH DISTRIBUTION BRAGG REFLECTION TYPE SEMICONDUCTOR LASER ARRAY
摘要 PURPOSE:To contrive the enlargement of the scale and improve the yield rate by causing a wave length variable distribution bragg reflection type (DBR) laser to be divided into a plurality of blocks so that each block may be equipped with a diffraction grating having the same period within the same block and further may be equipped with the diffraction grating having a different period within the different block respectively. CONSTITUTION:In connection with a multiple wave length DBR laser array where a large number of wave length variable DBR lasers are integrated on the same substrate, wave length variable DBR lasers are divided into (n) pcs. of blocks and periods of a diffraction grating 504 of a DBR region are established by moving their periods slightly by degrees at every block. Thus, wave lengths can be set up extensively by combining such blocks. The number of blocks (n) is restricted by a gain bandwidth of an active region 501 but, if a period difference of the diffraction grating 504 between blocks is set up so that 5 nm of a wave length interval may be obtained, a maximum of around 10 blocks is available and, for example, if the wave lengths are spaced 0.5 nm apart, a large scale of the multiple wave length laser array of a maximum of around 100 wave lengths can be realized.
申请公布号 JPS63148692(A) 申请公布日期 1988.06.21
申请号 JP19860294701 申请日期 1986.12.12
申请人 NEC CORP 发明人 MURATA SHIGERU
分类号 H01S5/00;H01S5/0625;H01S5/40 主分类号 H01S5/00
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